BSP297 E6327 Tech Spezifikatioune
Infineon Technologies - BSP297 E6327 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - BSP297 E6327
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1.8V @ 400µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PG-SOT223-4 | |
| Serie | SIPMOS® | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | TO-261-4, TO-261AA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 660mA (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies BSP297 E6327.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | BSP297 E6327 | BSP297L6327 | BSP296E6327 | BSP296NH6327XTSA1 |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Power Dissipation (Max) | 1.8W (Ta) | 1.8W (Ta) | 1.79W (Ta) | 1.8W (Ta) |
| Supplier Device Package | PG-SOT223-4 | PG-SOT223-4-21 | PG-SOT223-4 | PG-SOT223-4 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Package / Case | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V | 1.8Ohm @ 660mA, 10V | 700mOhm @ 1.1A, 10V | 600mOhm @ 1.2A, 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 660mA (Ta) | 660mA (Ta) | 1.1A (Ta) | 1.2A (Ta) |
| FET Feature | - | - | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V | 16.1 nC @ 10 V | 17.2 nC @ 10 V | 6.7 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V | 357 pF @ 25 V | 364 pF @ 25 V | 152.7 pF @ 25 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 100 V | 100 V |
| Serie | SIPMOS® | SIPMOS® | SIPMOS® | OptiMOS™ |
| Vgs (th) (Max) @ Id | 1.8V @ 400µA | 1.8V @ 400µA | 1.8V @ 400µA | 1.8V @ 100µA |
| Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden BSP297 E6327 PDF DataDhusts an Infineon Technologies Dokumentatioun fir BSP297 E6327 - Infineon Technologies.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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